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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Atomic layer etching ： ウィキペディア英語版 Atomic layer etching Atomic layer etching is an emerging technique in semiconductor manufacture, in which a sequence alternating between self-limiting chemical modification steps which affect only the top atomic layers of the wafer, and etching steps which remove only the chemically-modified areas, allows the removal of individual atomic layers. The standard example is etching of silicon by alternating reaction with chlorine and etching with argon ions. This is a better-controlled process than reactive ion etching, though the issue with commercial use of it has been throughput; sophisticated gas handling is required, and removal rates of one atomic layer per second are around the state of the art.〔(【引用サイトリンク】 title=Atomic Layer Etch now in Fab Evaluations )〕 The equivalent process for depositing material is atomic layer deposition; this is substantially more mature, having been used by Intel for high-κ dielectric layers since 2007. == References == 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Atomic layer etching」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.